公开(公告)号：US09112007B2

公开(公告)日：2015-08-18

申请号：US13619233

申请日：2012-09-14

申请人： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

发明人： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/525 ,  H01L23/532 ,  H01L23/00

CPC分类号： H01L23/528 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53271 ,  H01L24/05 ,  H01L24/13 ,  H01L27/088 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00

摘要： An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.

摘要翻译： 一种装置包括形成在基板中的通孔。 通孔连接在基板的第一侧和第二侧之间。 通孔包括与基板的第二侧相邻的底部，其中底部由导电材料形成。 通孔还包括由导电材料形成的侧壁部分和形成在侧壁部分之间的中间部分，其中中间部分由电介质材料形成。

公开(公告)号：US20140077374A1

公开(公告)日：2014-03-20

申请号：US13619233

申请日：2012-09-14

申请人： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

发明人： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/528 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53271 ,  H01L24/05 ,  H01L24/13 ,  H01L27/088 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00

摘要： An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.

摘要翻译： 一种装置包括形成在基板中的通孔。 通孔连接在基板的第一侧和第二侧之间。 通孔包括与基板的第二侧相邻的底部，其中底部由导电材料形成。 通孔还包括由导电材料形成的侧壁部分和形成在侧壁部分之间的中间部分，其中中间部分由电介质材料形成。

公开(公告)号：US09006101B2

公开(公告)日：2015-04-14

申请号：US13601265

申请日：2012-08-31

申请人： Hsin-Yu Chen ,  Ku-Feng Yang ,  Tasi-Jung Wu ,  Lin-Chih Huang ,  Yuan-Hung Liu ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

发明人： Hsin-Yu Chen ,  Ku-Feng Yang ,  Tasi-Jung Wu ,  Lin-Chih Huang ,  Yuan-Hung Liu ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  H01L23/31

CPC分类号： H01L23/528 ,  H01L21/76807 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5384 ,  H01L27/0617 ,  H01L2221/1031 ,  H01L2224/13 ,  H01L2924/13091 ,  H01L2924/00

摘要： An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first metallization layer formed over the interlayer dielectric layer, wherein the first metallization layer comprises a first metal line and a dielectric layer formed over the first metallization layer, wherein the dielectric layer comprises a metal structure having a bottom surface coplanar with a top surface of the first metal line.

摘要翻译： 一种装置包括形成在衬底的第一侧上的层间绝缘层，形成在层间介电层上的第一金属化层，其中第一金属化层包括形成在第一金属化层上的第一金属线和介电层，其中， 电介质层包括具有与第一金属线的顶表面共面的底表面的金属结构。

公开(公告)号：US20140061924A1

公开(公告)日：2014-03-06

申请号：US13601265

申请日：2012-08-31

申请人： Hsin-Yu Chen ,  Ku-Feng Yang ,  Tasi-Jung Wu ,  Lin-Chih Huang ,  Yuan-Hung Liu ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

发明人： Hsin-Yu Chen ,  Ku-Feng Yang ,  Tasi-Jung Wu ,  Lin-Chih Huang ,  Yuan-Hung Liu ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/528 ,  H01L21/76807 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5384 ,  H01L27/0617 ,  H01L2221/1031 ,  H01L2224/13 ,  H01L2924/13091 ,  H01L2924/00

摘要： An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first metallization layer formed over the interlayer dielectric layer, wherein the first metallization layer comprises a first metal line and a dielectric layer formed over the first metallization layer, wherein the dielectric layer comprises a metal structure having a bottom surface coplanr with a top surface of the first metal line.

摘要翻译： 一种装置包括形成在衬底的第一侧上的层间绝缘层，形成在层间介电层上的第一金属化层，其中第一金属化层包括形成在第一金属化层上的第一金属线和介电层，其中， 电介质层包括具有与第一金属线的顶表面共面的底表面的金属结构。

公开(公告)号：US20110316201A1

公开(公告)日：2011-12-29

申请号：US12822880

申请日：2010-06-24

申请人： Lin-Chih Huang ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Lin-Chih Huang ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B06B1/00 ,  H01L21/56 ,  B29C45/07

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L24/94 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： In accordance with an embodiment, a molding apparatus comprises a screen having a planar top surface; a recess in the screen and extending below the planar top surface; a blade capable of traversing the planar top surface; and a molding compound applicator. Another embodiment is a method for molding. The method comprises providing a substrate in a confined volume with an open top surface, applying molding compound in the confined volume, and traversing the open top surface with a blade thereby forming the molding compound to have a planar surface that is co-planar with the open top surface. The substrate has at least one semiconductor die adhered to the substrate.

摘要翻译： 根据实施例，成型设备包括具有平坦顶表面的筛网; 屏幕中的凹槽并在平面顶表面下方延伸; 能够穿过平面顶表面的刀片; 和模塑料涂布器。 另一实施例是一种模制方法。 该方法包括在约束体积中提供具有敞开顶部表面的基底，在约束体积中施加模塑料，并用刀片横穿开放的顶部表面，从而形成模制化合物以具有与该平坦表面共面的平坦表面 开顶表面。 衬底具有至少一个半导体管芯粘附到衬底上。

公开(公告)号：US06527431B2

公开(公告)日：2003-03-04

申请号：US09829605

申请日：2001-04-10

申请人： Kelven Chen ,  Lin-Chih Huang

发明人： Kelven Chen ,  Lin-Chih Huang

IPC分类号： B01F1300

CPC分类号： B01F15/0201 ,  B01F7/00291 ,  B01F15/00123 ,  B01F15/00415 ,  B01F15/026 ,  B29B7/7605 ,  B29B7/7615

摘要： A combined mixing and injecting device includes a housing having a pressure chamber and containing two plungers with one being sleeved around the other. The plungers have top ends formed with pistons which respectively extend into upper and lower chambers of the pressure chamber to be operated by a fluid, and bottom ends with tapering end faces extending into a bottom space below the lower chamber to perform a camming action. A mixer disposed below the housing includes a mixing chamber and valve units having valve stems respectively controlled by actuating elements which in turn are managed by the camming action of the plungers. The valve stems are connected to slide seats slidable along radial directions and spaced apart around the housing. The actuating elements actuate the slide seats so that the valve stems are operated to open or close inlet holes communicated with the mixing chamber.