发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12766389申请日: 2010-04-23
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公开(公告)号: US09112067B2公开(公告)日: 2015-08-18
- 发明人: Teruyuki Fujii , Kohei Ohshima , Junya Maruyama , Akihisa Shimomura
- 申请人: Teruyuki Fujii , Kohei Ohshima , Junya Maruyama , Akihisa Shimomura
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2009-112367 20090502
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/0296 ; H01L31/02 ; H01L31/028 ; H01L31/068 ; H01L31/075
摘要:
An object relates to an electrode of a semiconductor device or a method for manufacturing a semiconductor device, which includes a bonding step, and problems are: (1) high resistance of a semiconductor device due to the use of an Al electrode, (2) formation of an alloy by Al and Si, (3) high resistance of a film formed by a sputtering method, and (4) defective bonding in a bonding step which is caused if a bonding surface has a large unevenness. A semiconductor device includes a metal substrate or a substrate provided with a metal film, a copper (Cu) plating film over and bonded to the metal substrate or the metal film by employing a thermocompression bonding method, a barrier film over the Cu plating film, a single crystal silicon film over the barrier film, and an electrode layer over the single crystal silicon film.
公开/授权文献
- US20100275989A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2010-11-04