Invention Grant
- Patent Title: Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same
- Patent Title (中): 用于制造氧化物半导体的组合物及使用其制造薄膜晶体管基板的方法
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Application No.: US13670120Application Date: 2012-11-06
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Publication No.: US09115287B2Publication Date: 2015-08-25
- Inventor: Yeon-Taek Jeong , Bo-Sung Kim , Doo-Hyoung Lee , Doo-Na Kim , Eun-Hye Park , Dong-Lim Kim , Hyun-Jae Kim , You-Seung Rim , Hyun-Soo Lim
- Applicant: Samsung Display Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2011-0145657 20111229
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C09D5/00 ; H01L29/66 ; C04B35/453 ; H01L29/24 ; H01L29/786 ; H01L27/12 ; H01L29/22 ; C04B35/01 ; C04B35/457 ; C04B35/622
Abstract:
According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.
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