Invention Grant
US09117661B2 Method of improving oxide growth rate of selective oxidation processes
有权
提高选择性氧化工艺氧化物生长速率的方法
- Patent Title: Method of improving oxide growth rate of selective oxidation processes
- Patent Title (中): 提高选择性氧化工艺氧化物生长速率的方法
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Application No.: US14043505Application Date: 2013-10-01
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Publication No.: US09117661B2Publication Date: 2015-08-25
- Inventor: Yoshitaka Yokota , Norman L. Tam , Balasubramanian Ramachandran , Martin John Ripley
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L21/316 ; H01L21/32
Abstract:
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
Public/Granted literature
- US20140057455A1 METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES Public/Granted day:2014-02-27
Information query
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