公开(公告)号：US09832816B2

公开(公告)日：2017-11-28

申请号：US14258410

申请日：2014-04-22

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Paul Brillhart ,  Balasubramanian Ramachandran ,  Satheesh Kuppurao ,  Daniel Redfield ,  Joseph M. Ranish ,  James Francis Mack ,  Kailash Kiran Patalay ,  Michael Olsen ,  Eddie Feigel ,  Richard Halpin ,  Brett Vetorino

IPC: G02B5/08 ,  H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

公开(公告)号：US10077508B2

公开(公告)日：2018-09-18

申请号：US15415982

申请日：2017-01-26

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: C30B25/10 ,  C30B25/08 ,  C30B25/16 ,  C30B25/12 ,  C23C16/458 ,  C23C16/48 ,  C23C16/52 ,  G01J5/10 ,  G01J5/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

公开(公告)号：US20140376898A1

公开(公告)日：2014-12-25

申请号：US14258410

申请日：2014-04-22

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Paul Brillhart ,  Balasubramanian Ramachandran ,  Satheesh Kuppurao ,  Daniel Redfield ,  Joseph M. Ranish ,  James Francis Mack ,  Kailash Kiran Patalay ,  Michael Olsen ,  Eddie Feigel ,  Richard Halpin ,  Brett Vetorino

IPC: H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

Abstract translation: 本公开的实施例一般涉及用于热处理室的反射器。 在一个实施例中，热处理室通常包括上圆顶，与上圆顶相对的下圆顶，上圆顶和下圆顶，其限定处理室的内部体积，设置在内部体积内的基板支撑件和反射器 定位在上部圆顶上方并且靠近上部圆顶，其中反射器具有沉积在面向基板支撑件的反射器的侧面上的热吸收涂层。

公开(公告)号：US09842753B2

公开(公告)日：2017-12-12

申请号：US14257942

申请日：2014-04-21

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Joseph M. Ranish ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Zuoming Zhu

IPC: F26B3/00 ,  H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  C23C16/48 ,  H05B3/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  F27B17/0025 ,  F27D5/0037 ,  H05B3/0047

Abstract: The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

公开(公告)号：US11848226B2

公开(公告)日：2023-12-19

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US10179354B2

公开(公告)日：2019-01-15

申请号：US15162160

申请日：2016-05-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Balasubramanian Ramachandran ,  Masato Ishii ,  Aaron Muir Hunter

IPC: B08B9/46 ,  H01L21/67 ,  C23C16/44 ,  C23C16/52 ,  B08B3/08 ,  B08B3/10 ,  G01N21/94 ,  G01N21/84

Abstract: Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a method of monitoring a process being performed in a process chamber includes: performing a cleaning process in a process chamber to remove material deposited on one or more internal surfaces of the process chamber resultant from processes performed within the process chamber; shining a light on a first internal surface being cleaned; detecting the light reflected off of the first internal surface; and terminating the cleaning process based upon the detected light.

公开(公告)号：US09914999B2

公开(公告)日：2018-03-13

申请号：US14750322

申请日：2015-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. Rasheed ,  Balasubramanian Ramachandran ,  Shih Chung Chen ,  Kevin A. Papke ,  Lei Zhou ,  Jing Zhou

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45565

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300 μ-in Ra, or an emissivity (∈) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

公开(公告)号：US09532401B2

公开(公告)日：2016-12-27

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: F27D5/00 ,  C23C14/00 ,  H01L21/302 ,  H05B1/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

公开(公告)号：US09230837B2

公开(公告)日：2016-01-05

申请号：US14292300

申请日：2014-05-30

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: H01L21/00 ,  H05B6/66 ,  B05C11/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括具有圆顶和底板的真空室。 衬底支撑件设置在真空室内。 多个热灯布置在灯头中并且靠近真空室的地板定位。 反射器靠近穹顶设置，其中反射器和穹顶一起限定了热控制空间。 基板处理装置还包括耦合到热灯的多个电源和用于调节电源以控制真空室中的温度的控制器。

公开(公告)号：US20140263268A1

公开(公告)日：2014-09-18

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: H05B3/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。