发明授权
- 专利标题： Negative ion control for dielectric etch
- 专利标题（中）： 负离子控制电介质蚀刻
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申请号： US13188421申请日： 2011-07-21
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公开(公告)号： US09117767B2公开(公告)日： 2015-08-25
- 发明人: Alexei Marakhatanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
- 申请人： Alexei Marakhatanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Martine Penilla Group, LLP
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01J37/02 ; H01J37/32 ; C23C14/34 ; C23C16/505 ; H01L21/311 ; H01L21/67 ; H05H1/46
摘要：
Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
公开/授权文献
- US20130023064A1 Negative Ion Control for Dielectric Etch 公开/授权日：2013-01-24
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