Invention Grant
- Patent Title: Display substrate having a thin film transistor and method of manufacturing the same
- Patent Title (中): 具有薄膜晶体管的显示基板及其制造方法
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Application No.: US14148386Application Date: 2014-01-06
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Publication No.: US09117768B2Publication Date: 2015-08-25
- Inventor: Ki-Hyun Cho , Jeong-Won Kim , Kwang-Woo Park , Chul-Won Park
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0077551 20130703
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/12 ; H01L27/32

Abstract:
In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern.
Public/Granted literature
- US20150008426A1 DISPLAY SUBSTRATE HAVING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-01-08
Information query
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