Invention Grant
- Patent Title: Memory systems and memory programming methods
- Patent Title (中): 内存系统和内存编程方法
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Application No.: US14088046Application Date: 2013-11-22
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Publication No.: US09123414B2Publication Date: 2015-09-01
- Inventor: Makoto Kitagawa , Yogesh Luthra
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C13/00

Abstract:
Memory systems and memory programming methods are described. According to one aspect, a memory system includes program circuitry configured to provide a program signal to a memory cell to program the memory cell from a first memory state to a second memory state, detection circuitry configured to detect the memory cell changing from the first memory state to the second memory state during the provision of the program signal to the memory cell to program the memory cell, and wherein the program circuitry is configured to alter the program signal as a result of the detection and to provide the altered program signal to the memory cell to continue to program the memory cell from the first memory state to the second memory state.
Public/Granted literature
- US20150146472A1 Memory Systems and Memory Programming Methods Public/Granted day:2015-05-28
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