Invention Grant
- Patent Title: Low-k dielectric damage repair by vapor-phase chemical exposure
- Patent Title (中): 气相化学暴露对低k介电损伤的修复
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Application No.: US14530210Application Date: 2014-10-31
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Publication No.: US09123532B2Publication Date: 2015-09-01
- Inventor: Kelvin Chan , Alexandros T. Demos
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/263 ; H01L21/3105 ; H01L21/768 ; C23C16/04 ; C23C16/40
Abstract:
A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
Public/Granted literature
- US20150111396A1 LOW-K DIELECTRIC DAMAGE REPAIR BY VAPOR-PHASE CHEMICAL EXPOSURE Public/Granted day:2015-04-23
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