公开(公告)号：US20160254181A1

公开(公告)日：2016-09-01

申请号：US14634512

申请日：2015-02-27

Applicant: Applied Materials, Inc.

Inventor： Deenesh Padhi ,  Srinivas Guggilla ,  Alexandros T. Demos ,  Bhaskar Kumar ,  He Ren ,  Priyanka Dash

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76813 ,  H01L21/02458 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76862 ,  H01L23/53295

Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.

Abstract translation: 描述了在电介质层中形成特征的方法。 通孔，沟槽或双镶嵌结构可能在沉积保形氮化铝层之前存在于电介质层中。 保形氮化铝层被配置为用作屏障以防止穿过屏障的扩散。 形成氮化铝层的方法涉及交替暴露于两种前体处理（如ALD）以实现高共形性。 氮化铝阻挡层的高共形度使得能够减小厚度，并且随后的间隙填充金属层的有效导电性增加。

公开(公告)号：US09364871B2

公开(公告)日：2016-06-14

申请号：US13970176

申请日：2013-08-19

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

IPC: C23C16/455 ,  B08B7/00 ,  C11D11/00 ,  C23C16/44 ,  C23C16/48

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US09123532B2

公开(公告)日：2015-09-01

申请号：US14530210

申请日：2014-10-31

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Alexandros T. Demos

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/263 ,  H01L21/3105 ,  H01L21/768 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/02348 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

Abstract translation: 提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。 在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外线（UV）固化过程。

公开(公告)号：US10236197B2

公开(公告)日：2019-03-19

申请号：US14589990

申请日：2015-01-05

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Abhijit Basu Mallick ,  Hari K. Ponnekanti ,  Mandyam Sriram ,  Alexandros T. Demos ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez ,  Dale R. Dubois

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C14/58 ,  C23C14/50 ,  B05C13/00 ,  C23C16/56 ,  H01L21/677

Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

公开(公告)号：US09613908B2

公开(公告)日：2017-04-04

申请号：US14943913

申请日：2015-11-17

Applicant: Applied Materials, Inc.

Inventor： Deenesh Padhi ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Alexandros T. Demos ,  Mukund Srinivasan

IPC: H01L21/00 ,  H01L23/532 ,  H01L21/02 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  H01L21/768

CPC classification number: H01L23/5329 ,  C23C16/30 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack.

公开(公告)号：US09506145B2

公开(公告)日：2016-11-29

申请号：US15180514

申请日：2016-06-13

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

IPC: H01L21/00 ,  C23C16/44 ,  C23C16/48 ,  C23C16/455

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

公开(公告)号：US09312167B1

公开(公告)日：2016-04-12

申请号：US14505731

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Taewan Kim ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: H01L21/76 ,  H01L21/764 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02274 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02312 ,  H01L21/7682 ,  H01L21/76885 ,  H01L2221/1047

Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.

Abstract translation: 本文公开了使用气隙降低层的k值的方法和由所述方法制造的装置。 本文公开的方法可以包括在衬底中的一个或多个特征上沉积含碳堆叠，在含碳堆叠之上沉积多孔介电层，以及固化衬底以使含碳堆叠挥发。 所得到的器件包括其中形成有一个或多个特征的衬底，在特征上形成的多孔介电层，其中形成有特征中的气隙。

公开(公告)号：US20130284204A1

公开(公告)日：2013-10-31

申请号：US13856962

申请日：2013-04-04

Applicant: Applied Materials, Inc.

Inventor： BO XIE ,  Alexandros T. Demos ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez

IPC: B08B7/00

CPC classification number: B08B7/0021 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32862

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract translation: 本发明的实施例通常提供用于清洁UV处理室的方法。 在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中， 在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从在热处理室中呈现的腔室组分的暴露表面去除不需要的残留物或沉积物 使用活性氧自由基。

公开(公告)号：US09850574B2

公开(公告)日：2017-12-26

申请号：US14623357

申请日：2015-02-16

Applicant: Applied Materials, Inc.

Inventor： Taewan Kim ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: C23C16/30 ,  C23C14/28 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

Abstract: A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately.

公开(公告)号：US09659765B2

公开(公告)日：2017-05-23

申请号：US14799988

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Mahendra Chhabra ,  Kelvin Chan ,  Alexandros T. Demos ,  Priyanka Dash

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/027

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/0272 ,  H01L21/3105

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.