Invention Grant
US09123570B2 Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
有权
使用直接硅键合（DSB）衬底在混合取向技术（HOT）中改变晶体取向的集成方案
- Patent Title: Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
- Patent Title (中): 使用直接硅键合（DSB）衬底在混合取向技术（HOT）中改变晶体取向的集成方案
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Application No.: US13937398Application Date: 2013-07-09
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Publication No.: US09123570B2Publication Date: 2015-09-01
- Inventor: Angelo Pinto , Frank S. Johnson , Benjamin P. McKee , Shaofeng Yu
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/762 ; H01L21/8238 ; H01L29/04 ; H01L29/10 ; H01L29/78 ; H01L21/02
Abstract:
Optimizing carrier mobilities in MOS transistors in CMOS ICs requires forming (100)-oriented silicon regions for NMOS and (110) regions for PMOS. Methods such as amorphization and templated recrystallization (ATR) have disadvantages for fabrication of deep submicron CMOS. This invention is a method of forming an integrated circuit (IC) which has (100) and (110)-oriented regions. The method forms a directly bonded silicon (DSB) layer of (110)-oriented silicon on a (100)-oriented substrate. The DSB layer is removed in the NMOS regions and a (100)-oriented silicon layer is formed by selective epitaxial growth (SEG), using the substrate as the seed layer. NMOS transistors are formed on the SEG layer, while PMOS transistors are formed on the DSB layer. An integrated circuit formed with the inventive method is also disclosed.
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