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    Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
    2.
    发明授权
    Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates 有权
    使用直接硅键合（DSB）衬底在混合取向技术（HOT）中改变晶体取向的集成方案

    公开(公告)号：US09123570B2

    公开(公告)日：2015-09-01

    申请号：US13937398

    申请日：2013-07-09

    Applicant: Texas Instruments Incorporated

    Inventor： Angelo Pinto ,  Frank S. Johnson ,  Benjamin P. McKee ,  Shaofeng Yu

    IPC: H01L27/092 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/10 ,  H01L29/78 ,  H01L21/02

    CPC classification number: H01L27/0928 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/76224 ,  H01L21/823807 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/7833

    Abstract: Optimizing carrier mobilities in MOS transistors in CMOS ICs requires forming (100)-oriented silicon regions for NMOS and (110) regions for PMOS. Methods such as amorphization and templated recrystallization (ATR) have disadvantages for fabrication of deep submicron CMOS. This invention is a method of forming an integrated circuit (IC) which has (100) and (110)-oriented regions. The method forms a directly bonded silicon (DSB) layer of (110)-oriented silicon on a (100)-oriented substrate. The DSB layer is removed in the NMOS regions and a (100)-oriented silicon layer is formed by selective epitaxial growth (SEG), using the substrate as the seed layer. NMOS transistors are formed on the SEG layer, while PMOS transistors are formed on the DSB layer. An integrated circuit formed with the inventive method is also disclosed.

    Abstract translation: 在CMOS IC中的MOS晶体管中优化载流子迁移率需要为PMOS形成用于NMOS和（110）区域的（100）取向的硅区域。 诸如非晶化和模板重结晶（ATR）的方法具有制造深亚微米CMOS的缺点。 本发明是形成具有（100）和（110）取向区域的​​集成电路（IC）的方法。 该方法在（100）取向的衬底上形成（110）取向的硅的直接键合的硅（DSB）层。 在NMOS区域中去除DSB层，并且使用基底作为种子层，通过选择性外延生长（SEG）形成（100）取向硅层。 在SEG层上形成NMOS晶体管，而在DSB层上形成PMOS晶体管。 还公开了用本发明方法形成的集成电路。

    INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET SIDEWALL CHANNELS
    4.
    发明申请
    INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET SIDEWALL CHANNELS 有权
    具有对准（100）NMOS和（110）PMOS FinFET平台通道的集成电路

    公开(公告)号：US20140035057A1

    公开(公告)日：2014-02-06

    申请号：US13855520

    申请日：2013-04-02

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Weize W. Xiong ,  Cloves R. Cleavelin ,  Angelo Pinto ,  Rick L. Wise

    IPC: H01L27/11 ,  H01L27/092

    CPC classification number: H01L27/0886 ,  G11C11/412 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/045 ,  Y10S257/90 ,  Y10S438/973 ,  Y10S438/982

    Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.

    Abstract translation: 公开了一种包括多个多栅极FinFET（MuGFET）的集成电路器件。 通过在直接硅键合（DSB）混合取向技术（HOT）衬底上的非晶化和晶体再生长形成用于PMOS和NMOS MuGFET的不同晶体取向的晶片。 PMOS MuGFET翅片由具有（110）晶体取向的翅片侧壁表面限定的通道形成。 NMOS MuGFET翅片由曼哈顿布局具有（100）晶体取向的翅片侧壁表面限定的通道形成，其中不同PMOS和NMOS MuGFET的侧壁通道以0°或90°旋转对准。

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