Invention Grant
US09123789B2 Chip with through silicon via electrode and method of forming the same 有权
通过硅芯片通过电极及其形成方法

Chip with through silicon via electrode and method of forming the same
Abstract:
The present invention provides a method of forming a chip with TSV electrode. A substrate with a first surface and a second surface is provided. A thinning process is performed from a side of the second surface so the second surface becomes a third surface. Next, a penetration via which penetrates through the first surface and the third surface is formed in the substrate. A patterned material layer is formed on the substrate, wherein the patterned material layer has an opening exposes the penetration via. A conductive layer is formed on the third surface thereby simultaneously forming a TSV electrode in the penetration via and a surface conductive layer in the opening.
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