Invention Grant
US09123825B2 Methods for fabricating FinFET integrated circuits using laser interference lithography techniques
有权
使用激光干涉光刻技术制造FinFET集成电路的方法
- Patent Title: Methods for fabricating FinFET integrated circuits using laser interference lithography techniques
- Patent Title (中): 使用激光干涉光刻技术制造FinFET集成电路的方法
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Application No.: US14153521Application Date: 2014-01-13
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Publication No.: US09123825B2Publication Date: 2015-09-01
- Inventor: Sven Beyer , Alexander Ebermann , Carsten Grass , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/027 ; H01L21/306 ; H01L21/02 ; H01L21/3105 ; H01L21/3065 ; H01L21/28 ; H01L21/311
Abstract:
A method for fabricating an integrated circuit includes providing a semiconductor substrate with a pad layer overlying the semiconductor substrate and a photoresist layer overlying the pad layer, exposing the photoresist layer to a split laser beam to form a plurality of parallel linear void regions in the photoresist layer, and etching the pad layer and the semiconductor substrate beneath the plurality of parallel linear void regions to form a plurality of extended parallel linear void regions. The method further includes depositing a first dielectric material over the semiconductor substrate, patterning a photoresist material over the semiconductor substrate to cover a portion of the semiconductor substrate, and etching portions of the pad layer, the first dielectric material, and the semiconductor substrate. Still further, the method includes depositing a second dielectric material into the second void regions.
Public/Granted literature
- US20150200140A1 METHODS FOR FABRICATING FINFET INTEGRATED CIRCUITS USING LASER INTERFERENCE LITHOGRAPHY TECHNIQUES Public/Granted day:2015-07-16
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