Invention Grant
US09129696B2 Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same
有权
使用不同字线电压的不同阈值电压读取存储单元的方法和使用其的非易失性存储器件
- Patent Title: Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same
- Patent Title (中): 使用不同字线电压的不同阈值电压读取存储单元的方法和使用其的非易失性存储器件
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Application No.: US14340773Application Date: 2014-07-25
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Publication No.: US09129696B2Publication Date: 2015-09-08
- Inventor: Sang-Hyun Joo , Kiwhan Song , Ju Seok Lee , Kihwan Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0098809 20110929
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/26 ; G11C11/56 ; G11C16/04
Abstract:
A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.
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