Invention Grant
- Patent Title: Pillar on pad interconnect structures, semiconductor devices including same and related methods
- Patent Title (中): 柱互连结构上的支柱,包括相同方法的半导体器件
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Application No.: US14186869Application Date: 2014-02-21
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Publication No.: US09129869B2Publication Date: 2015-09-08
- Inventor: Owen R. Fay , Luke G. England , Christopher J. Gambee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/00 ; H01L21/027 ; H01L21/311 ; H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L25/065

Abstract:
Methods of fabricating interconnect structures for semiconductor dice comprise forming conductive elements in contact with bond pads on an active surface over a full pillar diameter of the conductive elements, followed by application of a photodefinable material comprising a photoresist to the active surface and over the conductive elements. The polyimide material is selectively exposed and developed to remove photodefinable material covering at least tops of the conductive elements. Semiconductor dice and semiconductor die assemblies are also disclosed.
Public/Granted literature
- US20140167259A1 PILLAR ON PAD INTERCONNECT STRUCTURES, SEMICONDUCTOR DEVICES INCLUDING SAME AND RELATED METHODS Public/Granted day:2014-06-19
Information query
IPC分类: