Invention Grant
US09129903B2 Methods of fabricating a semiconductor device using voids in a sacrificial layer
有权
在牺牲层中制造使用空隙的半导体器件的方法
- Patent Title: Methods of fabricating a semiconductor device using voids in a sacrificial layer
- Patent Title (中): 在牺牲层中制造使用空隙的半导体器件的方法
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Application No.: US14325080Application Date: 2014-07-07
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Publication No.: US09129903B2Publication Date: 2015-09-08
- Inventor: JungWoo Seo , JinSeo Choi , KyoungRyul Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/768 ; H01L21/033 ; H01L21/311

Abstract:
A semiconductor device is fabricated by forming first holes arranged along a first direction on an etch-target layer, forming dielectric patterns in the first holes, conformally forming a barrier layer on the dielectric patterns, forming a sacrificial layer on the barrier layer to define a first void, partially removing the sacrificial layer to expose the first void, anisotropically etching the barrier layer to form second holes below the first void, and etching portions of the etch-target layer located below the first and second holes to form contact holes. The first void may be formed on a first gap region confined by at least three of the dielectric patterns disposed adjacent to each other, and the sacrificial layer may include a material having a low conformality.
Public/Granted literature
- US20140322916A1 METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING VOIDS IN A SACRIFICIAL LAYER Public/Granted day:2014-10-30
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