Invention Grant
- Patent Title: Planar metrology pad adjacent a set of fins of a fin field effect transistor device
- Patent Title (中): 平面计量垫相邻一组翅片场效应晶体管器件
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Application No.: US14070624Application Date: 2013-11-04
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Publication No.: US09129905B2Publication Date: 2015-09-08
- Inventor: Xiang Hu , Lokesh Subramany , Alok Vaid , Sipeng Gu , Akshey Sehgal
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/66 ; H01L29/78

Abstract:
Approaches for providing a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. A previously deposited amorphous carbon layer can be removed from over a mandrel that has been previously formed on a subset of a substrate, such as using a photoresist. A pad hardmask can be formed over the mandrel on the subset of the substrate. This formation results in the subset of the substrate having the pad hardmask covering the mandrel thereon and the remainder of the substrate having the amorphous carbon layer covering the mandrel thereon. This amorphous carbon layer can be removed from over the mandrel on the remainder of the substrate, allowing a set of fins to be formed therein while the amorphous carbon layer keeps the set of fins from being formed in the portion of the substrate that it covers.
Public/Granted literature
- US20150123212A1 PLANAR METROLOGY PAD ADJACENT A SET OF FINS OF A FIN FIELD EFFECT TRANSISTOR DEVICE Public/Granted day:2015-05-07
Information query
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