Invention Grant
US09129927B2 Organic light-emitting diode displays with semiconducting-oxide and silicon thin-film transistors
有权
具有半导体氧化物和硅薄膜晶体管的有机发光二极管显示器
- Patent Title: Organic light-emitting diode displays with semiconducting-oxide and silicon thin-film transistors
- Patent Title (中): 具有半导体氧化物和硅薄膜晶体管的有机发光二极管显示器
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Application No.: US14229232Application Date: 2014-03-28
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Publication No.: US09129927B2Publication Date: 2015-09-08
- Inventor: Vasudha Gupta , Jae Won Choi , Shih Chang Chang , Tsung-Ting Tsai , Young Bae Park
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Treyz Law Group
- Agent G. Victor Treyz; Joseph F. Guihan
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L27/32 ; H01L27/12 ; G09G3/36 ; G02F1/1368

Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Public/Granted literature
- US20150053935A1 Organic Light-Emitting Diode Displays With Semiconducting-Oxide and Silicon Thin-Film Transistors Public/Granted day:2015-02-26
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