发明授权
- 专利标题： Non-polar and semi-polar light emitting devices
- 专利标题（中）： 非极性和半极性发光器件
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申请号： US12001227申请日： 2007-12-11
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公开(公告)号： US09130119B2公开(公告)日： 2015-09-08
- 发明人: Steven P. DenBaars , Mathew C. Schmidt , Kwang Choong Kim , James S. Speck , Shuji Nakamura
- 申请人： Steven P. DenBaars , Mathew C. Schmidt , Kwang Choong Kim , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland JP Saitama Prefecture
- 专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人地址： US CA Oakland JP Saitama Prefecture
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/32 ; B82Y20/00 ; H01L33/06 ; H01L33/16 ; H01L33/22 ; H01S5/22 ; H01S5/223 ; H01S5/34 ; H01S5/343
摘要：
An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
公开/授权文献
- US20080179607A1 Non-polar and semi-polar light emitting devices 公开/授权日：2008-07-31
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