Invention Grant
- Patent Title: Memory cells having a number of conductive diffusion barrier materials and manufacturing methods
- Patent Title (中): 具有多个导电扩散阻挡材料和制造方法的存储单元
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Application No.: US13952162Application Date: 2013-07-26
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Publication No.: US09130157B2Publication Date: 2015-09-08
- Inventor: Andrea Gotti , F. Daniel Gealy , Davide Columbo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L45/00 ; H01L27/24
Abstract:
Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.
Public/Granted literature
- US20150028284A1 MEMORY CELLS HAVING A NUMBER OF CONDUCTIVE DIFFUSION BARRIER MATERIALS AND MANUFACTURING METHODS Public/Granted day:2015-01-29
Information query
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