公开(公告)号：US20150028284A1

公开(公告)日：2015-01-29

申请号：US13952162

申请日：2013-07-26

Applicant: Micron Technology, Inc.

Inventor： Andrea Gotti ,  F. Daniel Gealy ,  Davide Columbo

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/12 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608

Abstract: Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.

公开(公告)号：US09130157B2

公开(公告)日：2015-09-08

申请号：US13952162

申请日：2013-07-26

Applicant: Micron Technology, Inc.

Inventor： Andrea Gotti ,  F. Daniel Gealy ,  Davide Columbo

IPC: H01L29/76 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/12 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608

Abstract: Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.

Abstract translation: 具有位于第一电极和第二电极之间的选择器件材料的存储器单元，位于第二电极和第三电极之间的存储元件以及位于存储元件的第一部分和第二电极之间的多个导电扩散阻挡材料 存储元件的一部分。 具有选择装置的存储单元包括位于第一电极和第二电极之间的选择装置材料，位于第二电极和第三电极之间的存储元件以及位于选择器的第一部分之间的多个导电扩散阻挡材料 设备和选择设备的第二部分。 还描述了制造方法。