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US09135975B2 Write pulse width scheme in a resistive memory 有权
在电阻性存储器中写入脉冲宽度方案

Write pulse width scheme in a resistive memory
Abstract:
A resistive memory array includes a controller, a test reset driver coupled to the controller, a test write driver also coupled to the controller, and a test read sense amplifier also coupled to the controller. The resistive memory array also includes a set of test resistive memory elements representing a resistive memory macro. The test resistive memory elements are coupled to the test reset driver, the test write driver and the test read sense amplifier. A change in the state of one of the test resistive memory elements represents a change in the state of a set of corresponding elements in the resistive memory macro.
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