Invention Grant
- Patent Title: Write pulse width scheme in a resistive memory
- Patent Title (中): 在电阻性存储器中写入脉冲宽度方案
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Application No.: US14064959Application Date: 2013-10-28
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Publication No.: US09135975B2Publication Date: 2015-09-15
- Inventor: Taehyun Kim , Jung Pill Kim , Sungryul Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C29/54 ; G11C13/00 ; G11C29/02 ; G11C29/24

Abstract:
A resistive memory array includes a controller, a test reset driver coupled to the controller, a test write driver also coupled to the controller, and a test read sense amplifier also coupled to the controller. The resistive memory array also includes a set of test resistive memory elements representing a resistive memory macro. The test resistive memory elements are coupled to the test reset driver, the test write driver and the test read sense amplifier. A change in the state of one of the test resistive memory elements represents a change in the state of a set of corresponding elements in the resistive memory macro.
Public/Granted literature
- US20150117086A1 WRITE PULSE WIDTH SCHEME IN A RESISTIVE MEMORY Public/Granted day:2015-04-30
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