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US09135976B2 Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements 有权
概率编程多级存储器在双稳态元件集群状态下的方法和装置

Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
Abstract:
A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.
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