Invention Grant
- Patent Title: Memory cell structure and method for forming the same
- Patent Title (中): 记忆单元结构及其形成方法
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Application No.: US14255977Application Date: 2014-04-18
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Publication No.: US09136276B1Publication Date: 2015-09-15
- Inventor: Ya-Huei Huang , Sung-Bin Lin , Wen-Chung Chang , Feng-Ji Tsai , Yen-Ting Ho , Chien-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/792 ; H01L29/66
Abstract:
A method for forming a memory cell structure includes following steps. A substrate including at least a memory cell region defined thereon is provided, and a first gate stack is formed in the memory cell region. A first LDD implantation is performed to form a first LDD at one side of the first gate stack in the memory cell region, and the first LDD includes a first conductivity type. A second LDD implantation is performed to form a second LDD at one side of the first gate stack opposite to the first LDD in the memory cell region, and the second LDD includes the first conductivity type. The first LDD and the second LDD are different from each other.
Information query
IPC分类:
