Invention Grant
- Patent Title: Shallow trench isolation
- Patent Title (中): 浅沟隔离
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Application No.: US13947439Application Date: 2013-07-22
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Publication No.: US09136330B2Publication Date: 2015-09-15
- Inventor: Yanxiang Liu , Johannes M. van Meer , Xiaodong Yang , Manfred J. Eller
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/06 ; H01L21/762
Abstract:
A semiconductor structure with an improved shallow trench isolation (STI) region and method of fabrication is disclosed. The STI region comprises a lower portion filled with oxide and an upper portion comprising a high Young's modulus (HYM) liner disposed on the lower portion and trench sidewalls and filled with oxide. The HYM liner is disposed adjacent to source-drain regions, and serves to reduce stress relaxation within the shallow trench isolation (STI) oxide, which has a relatively low Young's modulus and is soft. Hence, the HYM liner serves to increase the desired stress imparted by the embedded stressor source-drain regions, which enhances carrier mobility, thus increasing semiconductor performance.
Public/Granted literature
- US20150021702A1 SHALLOW TRENCH ISOLATION Public/Granted day:2015-01-22
Information query
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