公开(公告)号：US09136330B2

公开(公告)日：2015-09-15

申请号：US13947439

申请日：2013-07-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yanxiang Liu ,  Johannes M. van Meer ,  Xiaodong Yang ,  Manfred J. Eller

IPC: H01L29/49 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/30625 ,  H01L21/31053 ,  H01L29/0653 ,  H01L29/7846

Abstract: A semiconductor structure with an improved shallow trench isolation (STI) region and method of fabrication is disclosed. The STI region comprises a lower portion filled with oxide and an upper portion comprising a high Young's modulus (HYM) liner disposed on the lower portion and trench sidewalls and filled with oxide. The HYM liner is disposed adjacent to source-drain regions, and serves to reduce stress relaxation within the shallow trench isolation (STI) oxide, which has a relatively low Young's modulus and is soft. Hence, the HYM liner serves to increase the desired stress imparted by the embedded stressor source-drain regions, which enhances carrier mobility, thus increasing semiconductor performance.

Abstract translation: 公开了具有改进的浅沟槽隔离（STI）区域和制造方法的半导体结构。 STI区域包括填充有氧化物的下部分和包括设置在下部分上的高杨氏模量（HYM）衬垫和沟槽侧壁并填充有氧化物的上部部分。 HYM衬垫设置在源 - 漏区附近，用于减少浅沟槽隔离（STI）氧化物中的应力松弛，其具有较低的杨氏模量并且柔软。 因此，HYM衬垫用于增加由嵌入式应力源源极 - 漏极区域施加的所需应力，这增强了载流子迁移率，从而提高了半导体性能。

公开(公告)号：US20150348830A1

公开(公告)日：2015-12-03

申请号：US14824361

申请日：2015-08-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yanxiang Liu ,  Johannes M. van Meer ,  Xiaodong Yang ,  Manfred J. Eller

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/30625 ,  H01L21/31053 ,  H01L29/0653 ,  H01L29/7846

Abstract: A semiconductor structure with an improved shallow trench isolation (STI) region and method of fabrication is disclosed. The STI region comprises a lower portion filled with oxide and an upper portion comprising a high Young's modulus (HYM) liner disposed on the lower portion and trench sidewalls and filled with oxide. The HYM liner is disposed adjacent to source-drain regions, and serves to reduce stress relaxation within the shallow trench isolation (STI) oxide, which has a relatively low Young's modulus and is soft. Hence, the HYM liner serves to increase the desired stress imparted by the embedded stressor source-drain regions, which enhances carrier mobility, thus increasing semiconductor performance.

公开(公告)号：US20180061976A1

公开(公告)日：2018-03-01

申请号：US15797634

申请日：2017-10-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hui Zang ,  Manfred J. Eller ,  Min-Hwa Chi ,  Jerome J. B. Ciavatti

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/783 ,  H01L27/1104 ,  H01L29/41775 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/66795

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate structure between a pair of gate spacers within a dielectric layer and substantially surrounding a fin, wherein the gate structure is disposed adjacent to a channel region within the fin; and a source/drain contact extending within the dielectric layer to a source/drain region within a fin, the source/drain contact being separated from the gate structure by at least one gate spacer in the pair of gate spacers, wherein the channel region and the source/drain region provide electrical connection between the gate structure and the source/drain contact.

公开(公告)号：US20150021702A1

公开(公告)日：2015-01-22

申请号：US13947439

申请日：2013-07-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yanxiang Liu ,  Johannes M. van Meer ,  Xiaodong Yang ,  Manfred J. Eller

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/30625 ,  H01L21/31053 ,  H01L29/0653 ,  H01L29/7846

Abstract: A semiconductor structure with an improved shallow trench isolation (STI) region and method of fabrication is disclosed. The STI region comprises a lower portion filled with oxide and an upper portion comprising a high Young's modulus (HYM) liner disposed on the lower portion and trench sidewalls and filled with oxide. The HYM liner is disposed adjacent to source-drain regions, and serves to reduce stress relaxation within the shallow trench isolation (STI) oxide, which has a relatively low Young's modulus and is soft. Hence, the HYM liner serves to increase the desired stress imparted by the embedded stressor source-drain regions, which enhances carrier mobility, thus increasing semiconductor performance.

Abstract translation: 公开了具有改进的浅沟槽隔离（STI）区域和制造方法的半导体结构。 STI区域包括填充有氧化物的下部分和包括设置在下部分上的高杨氏模量（HYM）衬垫和沟槽侧壁并填充有氧化物的上部部分。 HYM衬垫设置在源 - 漏区附近，用于减少浅沟槽隔离（STI）氧化物中的应力松弛，其具有较低的杨氏模量并且柔软。 因此，HYM衬垫用于增加由嵌入式应力源源极 - 漏极区域施加的所需应力，这增强了载流子迁移率，从而提高了半导体性能。