Invention Grant
- Patent Title: Sense amplifier offset voltage reduction
- Patent Title (中): 感应放大器失调电压降低
-
Application No.: US13947144Application Date: 2013-07-22
-
Publication No.: US09140747B2Publication Date: 2015-09-22
- Inventor: Jung Pill Kim , Taehyun Kim , Sungryul Kim , Daeik D. Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G01R31/28 ; G11C29/14 ; G11C29/44 ; G11C29/46 ; G11C16/28 ; G11C29/02

Abstract:
A circuit includes a plurality of transistors responsive to a plurality of latches that store a test code. The circuit further includes a first bit line coupled to a data cell and coupled to a sense amplifier. The circuit also includes a second bit line coupled to a reference cell and coupled to the sense amplifier. A current from a set of the plurality of transistors is applied to the data cell via the first bit line. The set of the plurality of transistors is determined based on the test code. The circuit also includes a test mode reference circuit coupled to the first bit line and to the second bit line.
Public/Granted literature
- US20150022264A1 SENSE AMPLIFIER OFFSET VOLTAGE REDUCTION Public/Granted day:2015-01-22
Information query