发明授权
- 专利标题： MIM capacitor device
- 专利标题（中）： MIM电容器
-
申请号： US12929287申请日： 2011-01-12
-
公开(公告)号： US09142609B2公开(公告)日： 2015-09-22
- 发明人: Youichi Yamamoto , Naomi Fukumaki , Misato Sakamoto , Yoshitake Kato
- 申请人： Youichi Yamamoto , Naomi Fukumaki , Misato Sakamoto , Yoshitake Kato
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2010-005780 20100114
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/92 ; H01L49/02 ; H01L21/285 ; H01L21/768
摘要：
A semiconductor device has a capacitor element in which a capacitance dielectric film is disposed between an upper electrode film (upper electrode film, an upper electrode film) and a lower electrode film, and the lower electrode film has polycrystalline titanium nitride at least to a portion in contact with the capacitance dielectric film.
公开/授权文献
信息查询
IPC分类:
