Invention Grant
- Patent Title: ECC method for double pattern flash memory
- Patent Title (中): 双模式闪存的ECC方法
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Application No.: US14047418Application Date: 2013-10-07
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Publication No.: US09146809B2Publication Date: 2015-09-29
- Inventor: Shih-Chang Huang , Ken-Hui Chen , Chun-Hsiung Hung
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Yiding Wu
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52

Abstract:
A method of operating a memory device storing ECCs for corresponding data is provided. The method includes writing an extended ECC during a first program operation, the extended ECC including an ECC and an extended bit derived from the ECC. The method includes overwriting the extended ECC with a pre-determined state during a second program operation to indicate the second program operation. The method includes, setting the ECC to an initial ECC state before the first program operation; during the first program operation, computing the ECC, changing the ECC to the initial ECC state if the computed ECC equals the pre-determined state; and changing the extended bit to an initial value if the ECC equals the initial ECC state. The method includes reading an extended ECC including an extended bit and an ECC for corresponding data, and determining whether to enable ECC logic using the extended ECC.
Public/Granted literature
- US20150100852A1 ECC METHOD FOR DOUBLE PATTERN FLASH MEMORY Public/Granted day:2015-04-09
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