Invention Grant
- Patent Title: Reference and sensing with bit line stepping method of memory
- Patent Title (中): 参考和感应与位线步进方法的内存
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Application No.: US13861970Application Date: 2013-04-12
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Publication No.: US09147449B2Publication Date: 2015-09-29
- Inventor: Tien-Yen Wang , Chun-Hsiung Hung , Chia-Jung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW
- Agency: Volpe and Koenig, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/12 ; G11C7/02 ; G11C7/14 ; G11C11/56 ; G11C13/00
Abstract:
A sensing method for a memory is provided. The memory includes: a memory cell; a reference circuit generating a reference voltage and a clamp voltage; and a current supplying circuit receiving the clamp voltage to develop a cell current passing through the memory cell to form a cell voltage, wherein the cell voltage is used for incorporating with the reference voltage to determine the information stored in the memory.
Public/Granted literature
- US20140241070A1 REFERENCE AND SENSING WITH BIT LINE STEPPING METHOD OF MEMORY Public/Granted day:2014-08-28
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