Invention Grant
US09147572B2 Using sacrificial oxide layer for gate length tuning and resulting device
有权
使用牺牲氧化物层进行栅极长度调谐和产生的器件
- Patent Title: Using sacrificial oxide layer for gate length tuning and resulting device
- Patent Title (中): 使用牺牲氧化物层进行栅极长度调谐和产生的器件
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Application No.: US13896022Application Date: 2013-05-16
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Publication No.: US09147572B2Publication Date: 2015-09-29
- Inventor: Ashish Kumar Jha , Haiting Wang , Meng Luo , Yong Meng Lee
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/02 ; H01L21/28 ; H01L29/66 ; H01L21/311
Abstract:
Methods for controlling the length of a replacement metal gate to a designed target gate length and the resulting device are disclosed. Embodiments may include removing a dummy gate from above a substrate forming a cavity, wherein side surfaces of the cavity are lined with an oxidized spacer layer and a bottom surface of the cavity is lined with a gate oxide layer, conformally forming a sacrificial oxide layer over the substrate and the cavity, and removing the sacrificial oxide layer from the bottom surface of the cavity and the substrate leaving sacrificial oxide spacers lining the side surfaces of the cavity.
Public/Granted literature
- US20140339612A1 USING SACRIFICIAL OXIDE LAYER FOR GATE LENGTH TUNING AND RESULTING DEVICE Public/Granted day:2014-11-20
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