Invention Grant
- Patent Title: Resistor and fabrication method thereof
- Patent Title (中): 电阻及其制造方法
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Application No.: US13342995Application Date: 2012-01-04
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Publication No.: US09147678B2Publication Date: 2015-09-29
- Inventor: Chih-Kai Kang , Sheng-Yuan Hsueh , Shu-Hsuan Chih , Po-Kuang Hsieh , Chia-Chen Sun , Po-Cheng Huang , Shih-Chieh Hsu , Chi-Horn Pai , Yao-Chang Wang , Jie-Ning Yang , Chi-Sheng Tseng , Po-Jui Liao , Kuang-Hung Huang , Shih-Chang Chang
- Applicant: Chih-Kai Kang , Sheng-Yuan Hsueh , Shu-Hsuan Chih , Po-Kuang Hsieh , Chia-Chen Sun , Po-Cheng Huang , Shih-Chieh Hsu , Chi-Horn Pai , Yao-Chang Wang , Jie-Ning Yang , Chi-Sheng Tseng , Po-Jui Liao , Kuang-Hung Huang , Shih-Chang Chang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/06 ; H01L49/02
Abstract:
The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.
Public/Granted literature
- US20130168816A1 RESISTOR AND FABRICATION METHOD THEREOF Public/Granted day:2013-07-04
Information query
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