Invention Grant
- Patent Title: Semiconductor device comprising an integrated capacitor and method of fabrication
- Patent Title (中): 包括集成电容器和制造方法的半导体器件
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Application No.: US13935813Application Date: 2013-07-05
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Publication No.: US09147725B2Publication Date: 2015-09-29
- Inventor: Pierre Bar , Sylvain Joblot
- Applicant: STMicroelectronics S.A.
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1256838 20120716
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/02 ; H01L27/08
Abstract:
A semiconductor device includes a substrate wafer and having a front face and a back face. A front hole is formed in the front face and a multilayer capacitor is formed in the front hole. A back hole is formed in the back face of the substrate wafer to expose at least a portion of the multilayer capacitor. A front electrical connection on the front face and a back electrical connection in the back hole are used to make electrical connection to first and second conductive plates of the multilayer capacitor which are separated by a dielectric layer. The front hole may have a cylindrical shape or an annular shape.
Public/Granted literature
- US20140015102A1 SEMICONDUCTOR DEVICE COMPRISING AN INTEGRATED CAPACITOR AND METHOD OF FABRICATION Public/Granted day:2014-01-16
Information query
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