Invention Grant
US09147732B2 Group 13 nitride semiconductor device and method of its manufacture
有权
13族氮化物半导体器件及其制造方法
- Patent Title: Group 13 nitride semiconductor device and method of its manufacture
- Patent Title (中): 13族氮化物半导体器件及其制造方法
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Application No.: US13887065Application Date: 2013-05-03
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Publication No.: US09147732B2Publication Date: 2015-09-29
- Inventor: Johannes Theodorus Marinus Donkers , Stephan Heil , Romain Delhougne , Hans Broekman
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP12167365 20120509
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/66 ; H01L21/285 ; H01L29/45
Abstract:
Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.
Public/Granted literature
- US20130299846A1 GROUP 13 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURE Public/Granted day:2013-11-14
Information query
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