公开(公告)号：US20140366641A1

公开(公告)日：2014-12-18

申请号：US14300825

申请日：2014-06-10

Applicant: NXP B.V.

Inventor： Friso Jedema ,  Casper van der Avoort ,  Stephan Heil ,  Kim Phan Le ,  Olaf Wunnicke

IPC: G01F1/58

CPC classification number: G01F25/0007 ,  G01F1/56

Abstract: Flow sensors for measuring the flow of an ion-containing fluid may be implemented using mechanical or electrical techniques. Mechanical flow sensors are have moving parts and therefore may be unreliable after some time and are expensive to manufacture. Hall-effect type flow sensors typically require a reversible magnetic field to compensate for electrochemical effects. A flow meter including such a sensor uses an electromagnet. A flow sensor (100) is described using a capacitive sensor (10) and processor (12) to determine the flow rate from a change in capacitance and a magnetic field. Such a flow sensor may be implemented using CMOS technology. The flow sensor may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Abstract translation: 用于测量含离子流体的流量的流量传感器可以使用机械或电气技术来实现。 机械流量传感器具有移动部件，因此在一段时间后可能不可靠，制造成本高。 霍尔效应型流量传感器通常需要可逆磁场来补偿电化学效应。 包括这种传感器的流量计使用电磁体。 使用电容传感器（10）和处理器（12）来描述流量传感器（100），以根据电容和磁场的变化确定流量。 这样的流量传感器可以使用CMOS技术来实现。 流量传感器可以在由永磁体产生的磁场中操作，并可靠地测量流量。

公开(公告)号：US09331155B2

公开(公告)日：2016-05-03

申请号：US14249108

申请日：2014-04-09

Applicant: NXP B.V.

Inventor： Johannes Donkers ,  Hans Broekman ,  Stephan Heil ,  Mark De Keijser ,  Cecilia van der Schaar

IPC: H01L49/02 ,  H01L29/205 ,  H01L21/285 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/205 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7787

Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种半导体器件，其包括在衬底（10）上的至少一个有源层（14,16）和至少一个有源层的第一接触（24,26,28），所述第一接触包括与 所述至少一个有源层和所述金属上的氮化钨（TiW（N））层（30）。 还公开了制造这种半导体器件的方法。

公开(公告)号：US08962461B2

公开(公告)日：2015-02-24

申请号：US14108042

申请日：2013-12-16

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Stephan Heil ,  Jan Sonsky

IPC: H01L21/28 ,  H01L21/44 ,  H01L29/47 ,  H01L29/40 ,  H01L29/778 ,  H01L29/872 ,  H01L23/31 ,  H01L29/423 ,  H01L29/20

CPC classification number: H01L29/475 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/42316 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectriclayer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.

Abstract translation: 与示例性实施例一致，GaN异质结结构具有三层电介质结构。 栅电极的最下部和中部一起限定栅极脚，并且这与两个电介质层相关联。 较薄的第一介电层与栅极底部的栅极边缘相邻。 第二电介质层对应于常规结构中的层，并且与栅极脚的主要部分平齐。

公开(公告)号：US20130299846A1

公开(公告)日：2013-11-14

申请号：US13887065

申请日：2013-05-03

Applicant: NXP B.V.

Inventor： Johannes Theodorus Marinus Donkers ,  Stephan Heil ,  Romain Delhougne ,  Hans Broekman

IPC: H01L29/20 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L21/28575 ,  H01L29/452 ,  H01L29/66431

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括衬底（10）的半导体器件; 至少一个半导体层（12），包括在所述衬底上的第13族元素的氮化物; 和在所述至少一个半导体层上的欧姆接触（20），所述欧姆接触包括在所述至少一个半导体层上的含硅部分（22）和与所述至少一个半导体层相邻并在其上延伸的金属部分（24） 部分，金属部分包含钛和另一种金属。 还公开了制造这种半导体器件的方法。

公开(公告)号：US09349819B2

公开(公告)日：2016-05-24

申请号：US14714927

申请日：2015-05-18

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/47 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。

公开(公告)号：US20140167064A1

公开(公告)日：2014-06-19

申请号：US14108042

申请日：2013-12-16

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Stephan Heil ,  Jan Sonsky

IPC: H01L29/47 ,  H01L29/872 ,  H01L29/778 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/42316 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A GaN hetereojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectric layer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.

Abstract translation: GaN半导体结构具有三层电介质结构。 栅电极的最下部和中部一起限定栅极脚，并且这与两个电介质层相关联。 较薄的第一介电层与栅极底部的栅极边缘相邻。 第二电介质层对应于传统结构中的层，并且与栅极脚的主要部分平齐。

公开(公告)号：US09410839B2

公开(公告)日：2016-08-09

申请号：US14300825

申请日：2014-06-10

Applicant: NXP B.V.

Inventor： Friso Jedema ,  Casper van der Avoort ,  Stephan Heil ,  Kim Phan Le ,  Olaf Wunnicke

IPC: G01F1/56 ,  G01F25/00

CPC classification number: G01F25/0007 ,  G01F1/56

Abstract: A method and apparatus for measuring the rate of flow of an ion-containing fluid in a channel are disclosed herein. The apparatus includes a captive sensor operable to detect changes in capacitance value due to the deflection of the ions in the fluid by a magnetic field, and a processor operable to determine a flow speed of fluid from the detected change in capacitance value and a predetermined value of magnetic field strength. Such apparatus may be implemented using CMOS technology. The apparatus may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Abstract translation: 本文公开了一种用于测量通道中含离子的流体的流速的方法和装置。 该装置包括可操作以检测由于磁场中的流体中的离子的偏转导致的电容值变化的俘获传感器，以及可操作以从检测到的电容值的变化和预定值确定流体的流速的处理器 的磁场强度。 这样的装置可以使用CMOS技术来实现。 该装置可以在由永磁体产生的磁场中操作，并可靠地测量流量。

公开(公告)号：US20160020296A1

公开(公告)日：2016-01-21

申请号：US14714927

申请日：2015-05-18

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/47 ,  H01L21/02 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

公开(公告)号：US09147732B2

公开(公告)日：2015-09-29

申请号：US13887065

申请日：2013-05-03

Applicant: NXP B.V.

Inventor： Johannes Theodorus Marinus Donkers ,  Stephan Heil ,  Romain Delhougne ,  Hans Broekman

IPC: H01L29/20 ,  H01L29/66 ,  H01L21/285 ,  H01L29/45

CPC classification number: H01L29/2003 ,  H01L21/28575 ,  H01L29/452 ,  H01L29/66431

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括衬底（10）的半导体器件; 至少一个半导体层（12），包括在所述衬底上的第13族元素的氮化物; 和在所述至少一个半导体层上的欧姆接触（20），所述欧姆接触包括在所述至少一个半导体层上的含硅部分（22）和与所述至少一个半导体层相邻并在其上延伸的金属部分（24） 部分，金属部分包含钛和另一种金属。 还公开了制造这种半导体器件的方法。

公开(公告)号：US09064847B2

公开(公告)日：2015-06-23

申请号：US13895228

申请日：2013-05-15

Applicant: NXP B.V.

Inventor： Godefridus Andrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/47 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。