公开(公告)号：US20130299846A1

公开(公告)日：2013-11-14

申请号：US13887065

申请日：2013-05-03

Applicant: NXP B.V.

Inventor： Johannes Theodorus Marinus Donkers ,  Stephan Heil ,  Romain Delhougne ,  Hans Broekman

IPC: H01L29/20 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L21/28575 ,  H01L29/452 ,  H01L29/66431

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括衬底（10）的半导体器件; 至少一个半导体层（12），包括在所述衬底上的第13族元素的氮化物; 和在所述至少一个半导体层上的欧姆接触（20），所述欧姆接触包括在所述至少一个半导体层上的含硅部分（22）和与所述至少一个半导体层相邻并在其上延伸的金属部分（24） 部分，金属部分包含钛和另一种金属。 还公开了制造这种半导体器件的方法。

公开(公告)号：US09147732B2

公开(公告)日：2015-09-29

申请号：US13887065

申请日：2013-05-03

Applicant: NXP B.V.

Inventor： Johannes Theodorus Marinus Donkers ,  Stephan Heil ,  Romain Delhougne ,  Hans Broekman

IPC: H01L29/20 ,  H01L29/66 ,  H01L21/285 ,  H01L29/45

CPC classification number: H01L29/2003 ,  H01L21/28575 ,  H01L29/452 ,  H01L29/66431

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括衬底（10）的半导体器件; 至少一个半导体层（12），包括在所述衬底上的第13族元素的氮化物; 和在所述至少一个半导体层上的欧姆接触（20），所述欧姆接触包括在所述至少一个半导体层上的含硅部分（22）和与所述至少一个半导体层相邻并在其上延伸的金属部分（24） 部分，金属部分包含钛和另一种金属。 还公开了制造这种半导体器件的方法。