Invention Grant
- Patent Title: Method for the reuse of gallium nitride epitaxial substrates
- Patent Title (中): 氮化镓外延衬底再利用方法
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Application No.: US14493099Application Date: 2014-09-22
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Publication No.: US09147733B2Publication Date: 2015-09-29
- Inventor: Casey O. Holder , Daniel F. Feezell , Steven P. DenBaars , Shuji Nakamura
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/20 ; H01L21/02 ; H01L21/78 ; H01L21/3063 ; H01S5/02 ; H01S5/183 ; H01S5/343 ; B82Y20/00 ; H01L21/306 ; H01S5/20
Abstract:
A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
Public/Granted literature
- US20150048381A1 METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES Public/Granted day:2015-02-19
Information query
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