公开(公告)号：US20150048381A1

公开(公告)日：2015-02-19

申请号：US14493099

申请日：2014-09-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/20 ,  H01S5/343 ,  H01L21/3063 ,  H01S5/183 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract translation: 氮化镓（GaN）外延衬底的再利用方法使用带隙选择性光电化学（PEC）蚀刻从体积或独立的GaN衬底去除一个或多个外延层而不损坏衬底，允许衬底被再次使用 用于进一步生长附加的外延层。 该方法通过允许重新使用昂贵的体积或独立的GaN衬底而有助于器件生产的显着降低成本。

公开(公告)号：US09773704B2

公开(公告)日：2017-09-26

申请号：US15189356

申请日：2016-06-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/78 ,  H01L29/20 ,  H01L21/02 ,  H01L21/3063 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/306 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/00 ,  H01L33/32 ,  H01S5/187 ,  H01S5/20

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US20160307801A1

公开(公告)日：2016-10-20

申请号：US15189356

申请日：2016-06-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/78 ,  H01L31/0304 ,  H01L33/32 ,  H01L21/02 ,  H01S5/187 ,  H01L33/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  H01L29/20 ,  H01L31/18

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US08866149B2

公开(公告)日：2014-10-21

申请号：US13767739

申请日：2013-02-14

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/15 ,  H01L21/02 ,  H01S5/183 ,  H01S5/02 ,  H01L29/20 ,  H01L21/78 ,  H01L21/3063 ,  H01S5/343 ,  H01S5/20

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract translation: 氮化镓（GaN）外延衬底的再利用方法使用带隙选择性光电化学（PEC）蚀刻从体积或独立的GaN衬底去除一个或多个外延层而不损坏衬底，允许衬底被再次使用 用于进一步生长附加的外延层。 该方法通过允许重新使用昂贵的体积或独立的GaN衬底而有助于器件生产的显着降低成本。

公开(公告)号：US20140151634A1

公开(公告)日：2014-06-05

申请号：US14174581

申请日：2014-02-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Abstract translation: 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。

公开(公告)号：US20140023102A1

公开(公告)日：2014-01-23

申请号：US13947755

申请日：2013-07-22

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/10 ,  H01S5/183

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US09147733B2

公开(公告)日：2015-09-29

申请号：US14493099

申请日：2014-09-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L21/78 ,  H01L21/3063 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/306 ,  H01S5/20

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract translation: 氮化镓（GaN）外延衬底的再利用方法使用带隙选择性光电化学（PEC）蚀刻从体积或独立的GaN衬底去除一个或多个外延层而不损坏衬底，允许衬底被再次使用 用于进一步生长附加的外延层。 该方法通过允许重新使用昂贵的体积或独立的GaN衬底而有助于器件生产的显着降低成本。

公开(公告)号：US09136673B2

公开(公告)日：2015-09-15

申请号：US13947755

申请日：2013-07-22

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/183 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/42

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US20140167059A1

公开(公告)日：2014-06-19

申请号：US14014904

申请日：2013-08-30

Applicant: The Regents of the University of California

Inventor： Chung-Ta Hsu ,  Chia-Yen Huang ,  Yuji Zhao ,  Shih-Chieh Haung ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract translation: 在半极{20-2-1} III-氮化物半导体的暴露表面上执行光电化学（PEC）蚀刻的方法，用于改善从或在其上形成的一个或多个活性层的光提取和增强外部效率 半极性{20-2-1} III族氮化物半导体。

公开(公告)号：US20130299777A1

公开(公告)日：2013-11-14

申请号：US13890664

申请日：2013-05-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  James S. Speck ,  Chih-Chien Pan

IPC: H01L33/16 ,  H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.

Abstract translation: 当LED的结温从20℃增加到至少100℃时，具有小于10％的具有外部量子效率（EQE）的III族氮化物基LED，其LED的电流密度在 每平方厘米最少20安培