Invention Grant
- Patent Title: Power semiconductor device and method for manufacturing the same
- Patent Title (中): 功率半导体器件及其制造方法
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Application No.: US13874038Application Date: 2013-04-30
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Publication No.: US09147757B2Publication Date: 2015-09-29
- Inventor: Kee Ju Um , Dong Soo Seo , Chang Su Jang , In Hyuk Song , Jaehoon Park
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon
- Priority: KR10-2012-0141454 20121206
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/739 ; H01L29/66 ; H01L29/40 ; H01L29/06
Abstract:
There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer.
Public/Granted literature
- US20140159106A1 POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-06-12
Information query
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