Invention Grant
- Patent Title: Flatband shift for improved transistor performance
- Patent Title (中): 扁平带移位可提高晶体管的性能
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Application No.: US14497498Application Date: 2014-09-26
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Publication No.: US09147764B2Publication Date: 2015-09-29
- Inventor: Mahalingam Nandakumar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L29/49 ; H01L29/51 ; H01L27/088 ; H01L21/265 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L21/8238 ; H01L27/092
Abstract:
An integrated circuit includes MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. An integrated circuit includes MOS and LDMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the LDMOS transistor gate overlying the DEMOS transistor channel. A method of forming an integrated circuit with MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. A method of forming an integrated circuit with MOS and LDMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the LDMOS transistor gate overlying the DEMOS transistor channel.
Public/Granted literature
- US20150008518A1 FLATBAND SHIFT FOR IMPROVED TRANSISTOR PERFORMANCE Public/Granted day:2015-01-08
Information query
IPC分类:
