The RF stacked power amplifier comprises a voltage-dividing circuit, a negative feedback bias circuit, a current source circuit and a stacked amplifying circuit. The voltage-dividing circuit receives a system voltage and divides the system voltage for outputting a first reference partial voltage and a second reference partial voltage. The negative feedback bias circuit receives a negative feedback reference voltage and correspondingly outputs a second bias reference voltage according to a result of comparing the second reference partial voltage and the negative feedback reference voltage. The current source circuit determines a bias reference current according to the first reference partial voltage. The stacked amplifying circuit outputs the negative feedback reference voltage and determines an operation bias point according to a first bias reference voltage and the bias reference current. The RF stacked power amplifier makes the voltage-drop and the power consumption of each transistor equal via the voltage-dividing circuit.