发明授权
US09153626B2 Thin film transistor having at least two carbon nanotube patterns formed in a channel and connected by at least one floating electrode and a display device including the same
有权
薄膜晶体管具有至少两个形成在沟道中并由至少一个浮动电极连接的碳纳米管图案和包括该碳纳米管图案的显示装置
- 专利标题： Thin film transistor having at least two carbon nanotube patterns formed in a channel and connected by at least one floating electrode and a display device including the same
- 专利标题（中）： 薄膜晶体管具有至少两个形成在沟道中并由至少一个浮动电极连接的碳纳米管图案和包括该碳纳米管图案的显示装置
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申请号： US14460395申请日： 2014-08-15
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公开(公告)号： US09153626B2公开(公告)日： 2015-10-06
- 发明人: Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
- 申请人： SAMSUNG DISPLAY CO., LTD. , SNU R&DB FOUNDATION
- 申请人地址： KR Yongin, Gyeonggi-Do KR Seoul
- 专利权人： SAMSUNG DISPLAY CO., LTD.,SNU R&DB FOUNDATION
- 当前专利权人： SAMSUNG DISPLAY CO., LTD.,SNU R&DB FOUNDATION
- 当前专利权人地址： KR Yongin, Gyeonggi-Do KR Seoul
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2011-0119545 20111116
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L27/28 ; H01L51/00 ; H01L51/05 ; B82Y10/00 ; H01L27/32
摘要：
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
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