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1.发明申请THIN FILM TRANSISTOR USING A CARBON NANOTUBE AS A CHANNEL AND A DISPLAY DEVICE INCLUDING THE SAME 审中-公开使用碳纳米管作为通道的薄膜晶体管和包括其的显示器件公开(公告)号：US20140353592A1
公开(公告)日：2014-12-04
申请号：US14460395
申请日：2014-08-15
发明人： Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
CPC分类号： H01L27/283 , B82Y10/00 , H01L27/3274 , H01L51/0048 , H01L51/0558
摘要： A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
摘要翻译： 薄膜晶体管包括被配置为接收控制电压的栅电极，与栅电极绝缘的源电极，并且被配置为接收输入电压，与栅电极绝缘的漏电极，并且被配置为接收输出电压， 在源电极和漏电极之间的沟道区域中形成的至少两个碳纳米管图案，其中碳纳米管图案彼此分离，以及至少一个将两个碳纳米管图案彼此连接的浮动电极。
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2.发明授权Thin film transistor having at least two carbon nanotube patterns formed in a channel and connected by at least one floating electrode and a display device including the same 有权薄膜晶体管具有至少两个形成在沟道中并由至少一个浮动电极连接的碳纳米管图案和包括该碳纳米管图案的显示装置公开(公告)号：US09153626B2
公开(公告)日：2015-10-06
申请号：US14460395
申请日：2014-08-15
发明人： Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
CPC分类号： H01L27/283 , B82Y10/00 , H01L27/3274 , H01L51/0048 , H01L51/0558
摘要： A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
摘要翻译： 薄膜晶体管包括被配置为接收控制电压的栅电极，与栅电极绝缘的源电极，并且被配置为接收输入电压，与栅电极绝缘的漏电极，并且被配置为接收输出电压， 在源电极和漏电极之间的沟道区域中形成的至少两个碳纳米管图案，其中碳纳米管图案彼此分离，以及至少一个将两个碳纳米管图案彼此连接的浮动电极。
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公开(公告)号：US12087865B2
公开(公告)日：2024-09-10
申请号：US18176454
申请日：2023-02-28
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/12 , H01L29/417 , H01L29/66 , H01L29/786 , H10K59/121
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H10K59/1213
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US09791987B2
公开(公告)日：2017-10-17
申请号：US14833358
申请日：2015-08-24
发明人： So Young Koo , Jong Chan Lee , Yoon Ho Khang , Sun Haeng Cho
CPC分类号： G06F3/044 , G06F3/041 , G06F3/0412 , G06F2203/04103
摘要： A touch screen panel includes a substrate, a plurality of touch electrodes in a touch area of the substrate, the touch electrodes sensing a touch, a connection line connected to a touch electrode of the plurality of touch electrodes, and a pad connected to one end of the connection line. The pad includes a first pad, a second pad on the first pad within a boundary line of the first pad, and a third pad covering a top surface and a side surface of the second pad.
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公开(公告)号：US09502574B2
公开(公告)日：2016-11-22
申请号：US14249329
申请日：2014-04-09
发明人： Seung-Hwan Cho , Young Ki Shin , Dong Hwan Shim , Yoon Ho Khang , Hyun Jae Na
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.
摘要翻译： 薄膜晶体管包括：第一半导体层; 设置在所述第一半导体层上的第二半导体层; 以及通过用杂质掺杂第一半导体层和第二半导体层的两侧而形成的一对源区和漏区，源极区包括与第一半导体层在同一平面上的第一源极层和第二源极层 在与第二半导体层相同的平面上，漏区包括与第一半导体层相同的平面上的第一漏极层和与第二半导体层在同一平面上的第二漏极层，并且仅第一半导体 层，第二半导体层是晶体管沟道层。
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公开(公告)号：US09147741B2
公开(公告)日：2015-09-29
申请号：US13892574
申请日：2013-05-13
发明人： Hyun Jae Na , Yoon Ho Khang , Sang Ho Park , Dong Hwan Shim , Se Hwan Yu , Yong Su Lee , Myoung Geun Cha
IPC分类号： H01L21/84 , H01L21/20 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , H01L29/518 , H01L29/78603 , H01L29/78633
摘要： A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.
摘要翻译： 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及 形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。
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公开(公告)号：US10192901B2
公开(公告)日：2019-01-29
申请号：US15247989
申请日：2016-08-26
发明人： Young Ki Shin , Dae Ho Kim , Jong Chan Lee , Woong Hee Jeong , Yoon Ho Khang
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32
摘要： An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.
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公开(公告)号：US09768309B2
公开(公告)日：2017-09-19
申请号：US15194841
申请日：2016-06-28
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US09368515B2
公开(公告)日：2016-06-14
申请号：US14070886
申请日：2013-11-04
发明人： Dong Jo Kim , Ji Seon Lee , Jong Chan Lee , Yoon Ho Khang , Sang Ho Park , Yong Su Lee , Jung Kyu Lee
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L27/1288
摘要： A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.
摘要翻译： 薄膜晶体管阵列面板可以包括在半导体层中形成的氧化物半导体的沟道层，形成在半导体层中并连接到第一侧的沟道层的源电极，形成在半导体层中的漏电极和 连接到相对的第二侧的沟道层，形成在与漏电极的半导体层相同的部分中的半导体层中的像素电极，设置在沟道层上的绝缘层，设置在栅电极上的栅极线 绝缘层，设置在源电极和漏电极上的钝化层，像素电极和栅极线以及设置在钝化层上的数据线。 沟道层的宽度可以基本上等于像素电极在与栅极线平行的方向上的宽度。
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公开(公告)号：US20160141558A1
公开(公告)日：2016-05-19
申请号：US14708049
申请日：2015-05-08
发明人： Myoung Geun Cha , Jin Goo Jung , Yoon Ho Khang , Se Mi Kim
CPC分类号： H01L51/56 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要： An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.
摘要翻译： 公开了OLED显示器及其制造方法。 一方面，显示器包括形成在衬底上并被配置为传送扫描信号，数据线和与扫描线交叉的驱动电压线并分别被配置为传送数据电压和驱动电压的扫描线，以及切换 电连接到扫描线和数据线并且包括被配置为输出数据电压的开关漏极。 显示器还包括驱动晶体管，其包括驱动栅电极，驱动漏电极和与开关漏电极电连接的驱动源电极。 显示器还包括存储电容器，其包括电连接到驱动栅电极的第一存储电极和形成在与驱动电压线相同的层上的第二存储电极。
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