发明授权
- 专利标题： Semiconductor stacked body, method for manufacturing same, and semiconductor element
- 专利标题（中）： 半导体堆叠体及其制造方法以及半导体元件
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申请号： US14110417申请日： 2012-04-03
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公开(公告)号： US09153648B2公开(公告)日： 2015-10-06
- 发明人: Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
- 申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： TAMURA CORPORATION,KOHA CO, LTD.
- 当前专利权人： TAMURA CORPORATION,KOHA CO, LTD.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2011-086805 20110408
- 国际申请： PCT/JP2012/059090 WO 20120403
- 国际公布： WO2012/137781 WO 20121011
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/267 ; H01L29/737 ; H01L29/778 ; H01L29/78 ; H01L29/812 ; H01L29/872 ; C23C16/02 ; C23C16/30 ; H01L21/02 ; C30B25/18 ; C30B29/40 ; H01L33/00 ; H01L33/12 ; H01L33/32
摘要：
A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.
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