发明授权
- 专利标题: Low-noise receiver with complex RF attenuator
- 专利标题(中): 具有复合RF衰减器的低噪声接收器
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申请号: US13953803申请日: 2013-07-30
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公开(公告)号: US09154084B2公开(公告)日: 2015-10-06
- 发明人: Navin Harwalkar , Dan B. Kasha
- 申请人: Silicon Laboratories Inc.
- 申请人地址: US TX Austin
- 专利权人: Silicon Laboratories Inc.
- 当前专利权人: Silicon Laboratories Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Abel Law Group, LLP
- 主分类号: H04B1/06
- IPC分类号: H04B1/06 ; H03F1/22 ; H03F1/56 ; H03F3/193 ; H04B1/18 ; H04B1/26
摘要:
An apparatus includes an integrated circuit. The integrated circuit includes a low-noise amplifier having a first complex input impedance. The integrated circuit includes a complex attenuator coupled to an input terminal of the integrated circuit. The complex attenuator has a second complex input impedance and a first complex output impedance. The apparatus may include a matching network coupled to the input terminal of the integrated circuit. The matching network is external to the integrated circuit. The matching network may have a first real input impedance and a second complex output impedance. The second complex output impedance is matched to the second complex input impedance.
公开/授权文献
- US20150035595A1 LOW-NOISE RECEIVER WITH COMPLEX RF ATTENUATOR 公开/授权日:2015-02-05
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