Invention Grant
- Patent Title: Multi charged particle beam writing apparatus and multi charged particle beam writing method
- Patent Title (中): 多带电粒子束写入装置和多带电粒子束写入方法
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Application No.: US13798669Application Date: 2013-03-13
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Publication No.: US09159555B2Publication Date: 2015-10-13
- Inventor: Hiroshi Matsumoto
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-065387 20120322
- Main IPC: H01J3/07
- IPC: H01J3/07 ; H01J29/51 ; H01J37/26 ; H01L21/02 ; G03F7/20 ; H01J37/317 ; B82Y10/00 ; B82Y40/00

Abstract:
A multi charged particle beam writing apparatus includes a unit to calculate a predetermined function expression by a correction coefficient that corrects an open area of each opening for forming a beam group, wherein the predetermined function expression minimizes a sum of squared values of all the beam groups, where each of the squared values is calculated by squaring a difference between a current value measured of the beam group and a sum of products for the beam group, where each of the products is obtained by multiplying a corrected open area by the predetermined function expression; a unit to calculate the correction coefficient that corrects the open area by using the predetermined function expression and the current value of the beam, for each beam; and a unit to calculate a current density of each of the multiple beams by the predetermined function expression.
Public/Granted literature
- US20130253688A1 MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD Public/Granted day:2013-09-26
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