Multi-beam writing method and multi-beam writing apparatus

    公开(公告)号:US11869746B2

    公开(公告)日:2024-01-09

    申请号:US16929395

    申请日:2020-07-15

    IPC分类号: H01J37/317 H01J37/304

    摘要: In one embodiment, a multi-beam writing method is for irradiating each of pixels defined on a substrate, placed on a stage, with each beam of a multi-beam to form a pattern. The method includes obtaining a position correction amount of the pattern by each of a plurality of sub-arrays into which an array of the multi-beam is divided at least in a predetermined direction, based on the positional deviation amount of each beam of each of the sub-arrays, which obtained by dividing an array of the multi-beam at least in the predetermined direction, calculating an dose of the each beam irradiated to each pixel for shifting the position of the pattern drawn for each of the sub-arrays based on the position correction, and performing multi-writing using at least a portion of each two or more of the sub-arrays with the calculated dose.

    Multi charged particle beam writing apparatus and method of adjusting same

    公开(公告)号:US11740546B2

    公开(公告)日:2023-08-29

    申请号:US17653665

    申请日:2022-03-07

    摘要: In one embodiment, a multi charged particle beam writing apparatus includes an objective lens adjusting focus positions of multiple beams, an astigmatism correction element correcting astigmatism of the multiple beams, an inspection aperture allowing one of the multiple beams to pass therethrough, a deflector deflecting the multiple beams and causing the multiple beams to scan over the inspection aperture, a current detector detecting beam currents of the individual multiple beams after passing through the inspection aperture, a beam image formation unit forming a beam image based on the detected beam currents, a feature amount calculation unit generating a first waveform and a second waveform by adding brightnesses of the beam image in a first direction and in a second direction, and calculating a first and a second feature amounts from the first and the second waveforms, and a parameter calculation unit calculating an exciting parameter that is to be set for the astigmatism correction element based on the first feature amount and the second feature amount.

    Multi-beam writing method and multi-beam writing apparatus

    公开(公告)号:US11476086B2

    公开(公告)日:2022-10-18

    申请号:US17166050

    申请日:2021-02-03

    发明人: Hiroshi Matsumoto

    摘要: A multi-beam writing method includes acquiring a plurality of deflection coordinates for deflecting a beam to each of a plurality of pixels which are in each beam pitch region of a plurality of beam pitch regions, a number of pixels to be exposed by a beam in the each beam pitch region during each of tracking control period performed such that the multiple beams collectively follow a movement of a stage, and a deflection movement amount of the multiple beams at a time of tracking reset for resetting a tracking starting position after each of the tracking control period has passed; and generating a deflection sequence defined using the plurality of deflection coordinates, the number of pixels to be exposed during each of the tracking control period, and the deflection movement amount of the multiple beams at the time of tracking reset.

    Multi-charged particle beam writing apparatus and multi-charged particle beam writing method

    公开(公告)号:US11270865B2

    公开(公告)日:2022-03-08

    申请号:US17166070

    申请日:2021-02-03

    发明人: Hiroshi Matsumoto

    摘要: A multi-charged particle beam writing apparatus includes a movable stage to mount a substrate thereon, a shot data generation circuit to generate shot data of each shot of multiple charged particle beams, a shift amount calculation circuit to calculate a shift amount for collectively correcting positions of all of the multiple charged particle beams of the k-th shot, based on parameters related to at least the (k+1)th and subsequent shots (k being a natural number) of the multiple charged particle beams, and a writing mechanism including a deflector for deflecting the multiple charged particle beams, and to perform the k-th shot onto the substrate with the multiple charged particle beams while shifting the all of the multiple charged particle beams of the k-th shot by collective deflection according to the shift amount.

    Set of aperture substrates for multiple beams and multi charged particle beam apparatus

    公开(公告)号:US11139146B2

    公开(公告)日:2021-10-05

    申请号:US16799982

    申请日:2020-02-25

    发明人: Hiroshi Matsumoto

    摘要: A set of aperture substrates for multiple beams includes a first shaping aperture array substrate including a plurality of first openings, the first shaping aperture array substrate being irradiated with a charged particle beam in a region in which the first openings are formed whereby first multiple beams are formed with a part of the charged particle beams having passed respectively through the first openings, and a second shaping aperture array substrate including a plurality of second openings through which corresponding first multiple beam passes respectively whereby second multiple beams are formed. Each of the second multiple beams is shaped by a pair of opposite sides of the first opening and a pair of opposite sides of the second opening.

    Multiple charged particle beam writing apparatus and multiple charged particle beam writing method

    公开(公告)号:US10916406B2

    公开(公告)日:2021-02-09

    申请号:US16511094

    申请日:2019-07-15

    发明人: Hiroshi Matsumoto

    摘要: According to one aspect of the present invention, a multiple charged particle beam writing apparatus includes a subtraction processing circuit configured to subtract a corresponding shared dose from a dose of each of peripheral beams of a defect beam where control of a dose of a beam is disabled and the dose to be irradiated is excessive among the multiple charged particle beams, such that the same dose as an excess dose by the defect beam is shared by the peripheral beams of the defect beam; and a writing mechanism including a stage mounting a target object and a deflector deflecting the multiple charged particle beams and configured to write a pattern on the target object, using the multiple charged particle beams of doses in which the same dose as the excess dose of the defect beam is shared and is subtracted from the doses of the peripheral beams.

    Aperture set for multi-beam
    8.
    发明授权

    公开(公告)号:US10658158B2

    公开(公告)日:2020-05-19

    申请号:US16202553

    申请日:2018-11-28

    发明人: Hiroshi Matsumoto

    IPC分类号: H01J37/317 H01J37/04

    摘要: In one embodiment, an aperture set for multi-beam includes a shaping aperture array in which a plurality of first openings are formed, and which forms a multi-beam by allowing part of a charged particle beam to pass through corresponding ones of the plurality of first openings, a blanking aperture array in which a plurality of second openings are formed, the plurality of second openings each including a pair of blanking electrodes that perform blanking deflection of a beam, and an electric field shield plate that is disposed to be opposed to the blanking aperture array and includes a plurality of third openings. The electric field shield plate has a substrate, and a high resistance film provided on a surface of the substrate, the surface being opposed to the blanking aperture array, and the high resistance film has a higher electrical resistance value than an electrical resistance value of the substrate.

    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20190066975A1

    公开(公告)日:2019-02-28

    申请号:US16051911

    申请日:2018-08-01

    发明人: Hiroshi Matsumoto

    摘要: A multiple charged particle beam writing apparatus includes a circuitry to calculate, for each of the plurality of combinations, a first distribution coefficient for each of the three beams configuring the combination concerned, for distributing a dose to irradiate the design grid concerned to the three beams such that the gravity center position of each distributed dose coincides with the position of the design grid concerned and the sum of the each distributed dose coincides with the dose to irradiate the design grid concerned; and a circuitry to calculate, for each of the four or more beams, a second distribution coefficient of each of the four or more beams relating to the design grid concerned by dividing the total value of at least one first distribution coefficient corresponding to the beam concerned in the four or more beams by the number of the plurality of combinations.

    Charged particle beam writing apparatus and charged particle beam writing method

    公开(公告)号:US10199200B2

    公开(公告)日:2019-02-05

    申请号:US15791493

    申请日:2017-10-24

    IPC分类号: H01J37/302 H01J37/317

    摘要: A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose.