Invention Grant
- Patent Title: Apparatus and method to monitor die edge defects
- Patent Title (中): 监测管芯边缘缺陷的装置和方法
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Application No.: US13713935Application Date: 2012-12-13
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Publication No.: US09159646B2Publication Date: 2015-10-13
- Inventor: Mayue Xie , Zhiyong Wang , Yuan-Chuan Steven Chen
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; H01L23/48 ; H01L21/66 ; H01L27/02

Abstract:
Described is an apparatus comprising: an input pad; an output pad; a wire, coupled to the input pad and the output pad, the wire positioned at a periphery of a semiconductor die, the wire extending substantially along a perimeter of the semiconductor die; and one or more diodes, coupled at various sections of the wire, and positioned along the perimeter of the semiconductor die and surrounding the semiconductor die.
Public/Granted literature
- US20140168879A1 APPARATUS AND METHOD TO MONITOR DIE EDGE DEFECTS Public/Granted day:2014-06-19
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