Invention Grant
- Patent Title: Integrated circuits with close electrical contacts and methods for fabricating the same
- Patent Title (中): 具有紧密电接点的集成电路及其制造方法
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Application No.: US14083797Application Date: 2013-11-19
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Publication No.: US09159661B2Publication Date: 2015-10-13
- Inventor: Kai Frohberg , Peter Moll , Heike Scholz
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/532 ; H01L29/772 ; H01L29/92 ; H01L21/20 ; H01L23/498 ; H01L21/321 ; H01L21/768
Abstract:
Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the etch mask is removed from over a recess mid-point. A center contact is formed in the interlayer dielectric at the recess mid-point.
Public/Granted literature
- US20150137385A1 INTEGRATED CIRCUITS WITH CLOSE ELECTRICAL CONTACTS AND METHODS FOR FABRICATING THE SAME Public/Granted day:2015-05-21
Information query
IPC分类:
